The APT35GP120B2DQ2G is a power transistor from Microsemi with a collector emitter voltage of 1.2kV and a current rating of 96A. It is available in a through hole package and is lead free. The device is rated for operation between -55°C and 150°C. It is compliant with RoHS regulations.
Current Rating96A
MountingThrough Hole
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Technical Specifications
Microsemi APT35GP120B2DQ2G technical specifications.
General
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Current Rating | 96A |
| Lead Free | Lead Free |
| Max Collector Current | 96A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 1.2kV |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APT35GP120B2DQ2G Datasheet
Download the complete datasheet for Microsemi APT35GP120B2DQ2G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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