The APT44GA60BD30C is a high-power transistor from Microsemi, featuring a TO-247-3 package and through-hole mounting. It has a collector-emitter breakdown voltage of 600V and a maximum collector current of 78A. The device is RoHS compliant and suitable for use in high-power applications. The transistor's maximum power dissipation is 337W, and it has a maximum collector-emitter voltage of 1.6V. It is part of Microsemi's POWER MOS 8 series.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Microsemi APT44GA60BD30C technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 1.6V |
| Input Type | STANDARD |
| Max Collector Current | 78A |
| Max Power Dissipation | 337W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | POWER MOS 8™ |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APT44GA60BD30C Datasheet
Download the complete datasheet for Microsemi APT44GA60BD30C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.