The APT56M50B2 is a 56A N-CHANNEL power MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 780W and is packaged in a TO-247-3 case with a lead-free finish. The device has a drain to source voltage of 500V and a gate to source voltage of 30V. It also features a drain to source resistance of 85mR and a maximum Rds on of 100mR.
PackageTO-247-3
Current Rating56A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Microsemi APT56M50B2 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 56A |
| Current Rating | 56A |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 5.31mm |
| Input Capacitance | 8.8nF |
| Lead Free | Lead Free |
| Length | 21.46mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 780W |
| Mount | Through Hole |
| Package Quantity | 47 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 38ns |
| DC Rated Voltage | 500V |
| Width | 16.26mm |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APT56M50B2 Datasheet
Download the complete datasheet for Microsemi APT56M50B2 to view detailed technical specifications.
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