
The APT56M60B2 is a high-power N-channel MOSFET from Microsemi, featuring a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 1.04kW and is packaged in a TO-247-3 case for through-hole mounting. The device has a drain-to-source voltage rating of 600V and a continuous drain current rating of 60A, with a maximum drain-to-source resistance of 90mR. It is RoHS compliant and lead-free.
Microsemi APT56M60B2 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 60A |
| Current Rating | 56A |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 5.31mm |
| Input Capacitance | 11.3nF |
| Lead Free | Lead Free |
| Length | 21.46mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.04kW |
| Mount | Through Hole |
| Package Quantity | 33 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 130mR |
| RoHS Compliant | Yes |
| Series | POWER MOS 8™ |
| Turn-Off Delay Time | 190ns |
| Turn-On Delay Time | 65ns |
| DC Rated Voltage | 600V |
| Width | 16.26mm |
| RoHS | Compliant |
Download the complete datasheet for Microsemi APT56M60B2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.