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Technical Specifications
Microsemi APT58M50JU3 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 58A |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.6mm |
| Input Capacitance | 10.8nF |
| Length | 38.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 543W |
| Mount | Chassis Mount, Screw |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 65mR |
| RoHS Compliant | Yes |
| Series | POWER MOS 8™ |
| Turn-Off Delay Time | 155ns |
| Turn-On Delay Time | 60ns |
| Weight | 1.058219oz |
| Width | 25.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APT58M50JU3 Datasheet
Download the complete datasheet for Microsemi APT58M50JU3 to view detailed technical specifications.
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