The APT84F50B2 is a high-power MOSFET from Microsemi, featuring a maximum drain to source voltage of 500V and continuous drain current of 84A. It is packaged in a TO-247-3 case and is designed for through-hole mounting. The device operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.135kW. The APT84F50B2 is compliant with RoHS regulations and is part of Microsemi's POWER MOS 8 series.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Microsemi APT84F50B2 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 84A |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 13.5nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.135kW |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 65mR |
| RoHS Compliant | Yes |
| Series | POWER MOS 8™ |
| Turn-Off Delay Time | 155ns |
| Turn-On Delay Time | 60ns |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APT84F50B2 Datasheet
Download the complete datasheet for Microsemi APT84F50B2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.