Microsemi APTC60DSKM35T3G technical specifications.
| Package/Case | Module |
| Continuous Drain Current (ID) | 72A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 84ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 14nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 416W |
| Mount | Chassis Mount, Screw |
| Packaging | Bulk |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 283ns |
| Turn-On Delay Time | 21ns |
| RoHS | Compliant |
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