The APTC80DSK15T3G is a 2 N-Channel FET module with a maximum drain to source voltage of 800V and a maximum gate to source voltage of 30V. It can handle a continuous drain current of up to 28A and has a maximum power dissipation of 277W. The module is designed for chassis mount and screw packaging, with an operating temperature range of -40°C to 150°C. It is RoHS compliant and does not have radiation hardening.
PackageModule
MountingChassis Mount, Screw
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Technical Specifications
Microsemi APTC80DSK15T3G technical specifications.
General
| Package/Case | Module |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 35ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 4.507nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 277W |
| Mount | Chassis Mount, Screw |
| Packaging | Bulk |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 83ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APTC80DSK15T3G Datasheet
Download the complete datasheet for Microsemi APTC80DSK15T3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.