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Technical Specifications
Microsemi APTC90H12T1G technical specifications.
General
| Package/Case | Module |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 25ns |
| FET Type | 4 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.8nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 250W |
| Mount | Chassis Mount, Screw |
| Package Quantity | 1 |
| Packaging | Tray |
| Radiation Hardening | No |
| Rds On Max | 120mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 400ns |
| Turn-On Delay Time | 70ns |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APTC90H12T1G Datasheet
Download the complete datasheet for Microsemi APTC90H12T1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.