The APTGT100H60T3G is a high-power transistor from Microsemi, featuring a maximum collector current of 150A and a collector-emitter voltage of 600V. It has a saturation voltage of 1.5V and a maximum power dissipation of 340W. The device is packaged in a module format and is designed for screw mounting. It operates over a temperature range of -40°C to 175°C and is compliant with RoHS regulations.
PackageModule
MountingScrew
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Technical Specifications
Microsemi APTGT100H60T3G technical specifications.
General
| Package/Case | Module |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 600V |
| Height | 11.5mm |
| Lead Free | Lead Free |
| Length | 73.4mm |
| Max Collector Current | 150A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 340W |
| Mount | Screw |
| Package Quantity | 50 |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 225ns |
| Turn-On Delay Time | 115ns |
| Width | 40.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APTGT100H60T3G Datasheet
Download the complete datasheet for Microsemi APTGT100H60T3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.