The APTGT50DDA60T3G is a power transistor from Microsemi with a collector emitter voltage of 600V and a maximum collector current of 80A. It is packaged in a module format and is designed to operate over a temperature range of -40°C to 175°C. The device is RoHS compliant and is available in bulk packaging. It is not radiation hardened.
PackageModule
MountingScrew
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Technical Specifications
Microsemi APTGT50DDA60T3G technical specifications.
General
| Package/Case | Module |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 80A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APTGT50DDA60T3G Datasheet
Download the complete datasheet for Microsemi APTGT50DDA60T3G to view detailed technical specifications.
No datasheet is available for this part.