The APTM100DSK35T3G is a 2 N-Channel power FET module from Microsemi with a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. It has a maximum power dissipation of 390W and a continuous drain current of 22A. The module features a drain to source voltage of 1kV and a gate to source voltage of 30V. It has a fall time of 40ns and a turn-off delay time of 155ns. The module is RoHS compliant and is packaged in a bulk package.
PackageModule
MountingChassis Mount, Screw
Power390W
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Technical Specifications
Microsemi APTM100DSK35T3G technical specifications.
General
| Package/Case | Module |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 40ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 5.2nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 390W |
| Mount | Chassis Mount, Screw |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Bulk |
| Power Dissipation | 390W |
| Radiation Hardening | No |
| Rds On Max | 420mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 155ns |
| Turn-On Delay Time | 18ns |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APTM100DSK35T3G Datasheet
Download the complete datasheet for Microsemi APTM100DSK35T3G to view detailed technical specifications.
No datasheet is available for this part.