This 2 N-Channel power MOSFET from Microsemi features a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. It has a maximum power dissipation of 390W and is RoHS compliant. The device is packaged in bulk and is a single unit. It has a maximum Rds On of 10mR and a turn-on delay time of 35ns, as well as a turn-off delay time of 95ns.
MountingChassis Mount, Screw
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Technical Specifications
Microsemi APTM10DHM09T3G technical specifications.
General
| Continuous Drain Current (ID) | 139A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 125ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 9.875nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 390W |
| Mount | Chassis Mount, Screw |
| Package Quantity | 1 |
| Packaging | Bulk |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Series | POWER MOS V® |
| Turn-Off Delay Time | 95ns |
| Turn-On Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APTM10DHM09T3G Datasheet
Download the complete datasheet for Microsemi APTM10DHM09T3G to view detailed technical specifications.
No datasheet is available for this part.