The APTM120DDA57T3G is a 2 N-Channel FET from Microsemi, rated for 1.2kV drain to source voltage and 17A continuous drain current. It has a maximum power dissipation of 390W and is designed for chassis mount applications. The device operates over a temperature range of -40°C to 150°C and is compliant with RoHS regulations. The FET has a maximum Rds on resistance of 684mR and turn-on and turn-off delay times of 20ns and 160ns, respectively.
MountingChassis Mount, Screw
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Technical Specifications
Microsemi APTM120DDA57T3G technical specifications.
General
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Fall Time | 45ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 5.155nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 390W |
| Mount | Chassis Mount, Screw |
| Packaging | Bulk |
| Radiation Hardening | No |
| Rds On Max | 684mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 160ns |
| Turn-On Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APTM120DDA57T3G Datasheet
Download the complete datasheet for Microsemi APTM120DDA57T3G to view detailed technical specifications.
No datasheet is available for this part.