The APTM50DDAM65T3G is a power MOSFET module from Microsemi, featuring a continuous drain current of 51A and a gate to source voltage of 30V. It operates within a temperature range of -40°C to 150°C and is available in a bulk packaging option. The module is RoHS compliant and does not offer radiation hardening. With a fall time of 93ns, turn-off delay time of 75ns, and turn-on delay time of 21ns, this module is suitable for high-speed applications.
PackageModule
MountingScrew
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Technical Specifications
Microsemi APTM50DDAM65T3G technical specifications.
General
| Package/Case | Module |
| Continuous Drain Current (ID) | 51A |
| Fall Time | 93ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 21ns |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APTM50DDAM65T3G Datasheet
Download the complete datasheet for Microsemi APTM50DDAM65T3G to view detailed technical specifications.
No datasheet is available for this part.