The APTM50DHM65TG is a 2 N-Channel FET from Microsemi with a maximum drain to source voltage of 500V and continuous drain current of 51A. It has a maximum power dissipation of 390W and an on-resistance of 78mR. The device is packaged in bulk and is RoHS compliant. It operates over a temperature range of -40 to 150°C.
MountingChassis Mount
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Technical Specifications
Microsemi APTM50DHM65TG technical specifications.
General
| Continuous Drain Current (ID) | 51A |
| Drain to Source Voltage (Vdss) | 500V |
| FET Type | 2 N-Channel |
| Input Capacitance | 7nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 390W |
| Mount | Chassis Mount |
| Packaging | Bulk |
| Rds On Max | 78mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APTM50DHM65TG Datasheet
Download the complete datasheet for Microsemi APTM50DHM65TG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.