The DLTS30A diode from Microsemi features a unidirectional design with a minimum breakdown voltage of 33.3V. It is packaged in a CDIP case and is suitable for through-hole mounting. The device operates over a temperature range of -55°C to 150°C and has a maximum reverse leakage current of 2uA. It can handle peak pulse currents of up to 10A and peak pulse powers of up to 500W.
Microsemi DLTS30A technical specifications.
| Package/Case | CDIP |
| Direction | Unidirectional |
| Min Breakdown Voltage | 33.3V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Reverse Leakage Current | 2uA |
| Mount | Through Hole |
| Peak Pulse Current | 10A |
| Peak Pulse Power | 500W |
| Reverse Standoff Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for Microsemi DLTS30A to view detailed technical specifications.
No datasheet is available for this part.