The DLTS30C bidirectional diode is packaged in a CDIP case and is rated for operation from -55°C to 150°C. It features a minimum breakdown voltage of 33.3V and a maximum reverse leakage current of 4uA. The diode can withstand a peak pulse current of 10A and a peak pulse power of 500W.
PackageCDIP
MountingThrough Hole
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Technical Specifications
Microsemi DLTS30C technical specifications.
General
| Package/Case | CDIP |
| Direction | Bidirectional |
| Min Breakdown Voltage | 33.3V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Reverse Leakage Current | 4uA |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Peak Pulse Current | 10A |
| Peak Pulse Power | 500W |
| Radiation Hardening | No |
| Reverse Standoff Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi DLTS30C Datasheet
Download the complete datasheet for Microsemi DLTS30C to view detailed technical specifications.
No datasheet is available for this part.