The JAN1N5658A diode is a unidirectional device with a minimum breakdown voltage of 105V. It can withstand a peak pulse current of 9.9A and a peak pulse power of 1.5kW. The diode operates within a temperature range of -65°C to 175°C. It is available in bulk packaging and is suitable for through-hole mounting.
MountingThrough Hole
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Technical Specifications
Microsemi JAN1N5658A technical specifications.
General
| Direction | Unidirectional |
| Min Breakdown Voltage | 105V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Reverse Leakage Current | 5uA |
| Mount | Through Hole |
| Packaging | Bulk |
| Peak Pulse Current | 9.9A |
| Peak Pulse Power | 1.5kW |
| Radiation Hardening | No |
| Reverse Standoff Voltage | 94V |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN1N5658A Datasheet
Download the complete datasheet for Microsemi JAN1N5658A to view detailed technical specifications.
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