The JAN2N2060 is a dual NPN transistor from Microsemi, packaged in a TO-78 case and mounted through a hole. It can handle a collector base voltage of up to 100V and a collector emitter voltage of up to 60V. The transistor can operate at a maximum collector current of 500mA and a maximum power dissipation of 600mW. It has a maximum operating temperature of 125°C and a minimum operating temperature of -55°C.
PackageTO-78
MountingThrough Hole
PolarityNPN
Power600mW
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Technical Specifications
Microsemi JAN2N2060 technical specifications.
General
| Package/Case | TO-78 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Voltage (VCEO) | 60V |
| Emitter Base Voltage (VEBO) | 7V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600mW |
| Mount | Through Hole |
| Number of Elements | 2 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 600mW |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N2060 Datasheet
Download the complete datasheet for Microsemi JAN2N2060 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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