The JAN2N2604 is a NPN transistor with a collector base voltage of 80V and a maximum collector current of 30mA. It has a maximum power dissipation of 400mW and operates over a temperature range of -65°C to 200°C. The device is packaged in a bulk format and is not radiation hardened. It is not RoHS compliant.
MountingThrough Hole
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Technical Specifications
Microsemi JAN2N2604 technical specifications.
General
| Collector Base Voltage (VCBO) | 80V |
| Max Collector Current | 30mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 400mW |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N2604 Datasheet
Download the complete datasheet for Microsemi JAN2N2604 to view detailed technical specifications.
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