The JAN2N3725 is a NPN transistor with a collector base voltage of 80V and a maximum collector current of 500mA. It has a maximum power dissipation of 1W and can operate within a temperature range of -55°C to 125°C. The device is available in a through hole packaging style and is not radiation hardened. It is not compliant with RoHS regulations.
MountingThrough Hole
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Technical Specifications
Microsemi JAN2N3725 technical specifications.
General
| Collector Base Voltage (VCBO) | 80V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N3725 Datasheet
Download the complete datasheet for Microsemi JAN2N3725 to view detailed technical specifications.
No datasheet is available for this part.