The JAN2N3762L is a NPN transistor with a collector base voltage of 40V and a maximum collector current of 1.5A. It can operate within a temperature range of -55°C to 200°C and has a maximum power dissipation of 500mW. The device is packaged in a bulk format and is suitable for through hole mounting.
MountingThrough Hole
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Technical Specifications
Microsemi JAN2N3762L technical specifications.
General
| Collector Base Voltage (VCBO) | 40V |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N3762L Datasheet
Download the complete datasheet for Microsemi JAN2N3762L to view detailed technical specifications.
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