The JAN2N3868S is a PNP transistor with a collector base voltage rating of 60V and a maximum collector current of 3A. It has a maximum power dissipation of 1W and operates over a temperature range of -55°C to 200°C. The device is packaged in a TO-39 case and is available in bulk packaging. The JAN2N3868S is not radiation hardened and is not RoHS compliant.
PackageTO-39
MountingThrough Hole
PolarityPNP
Power1W
Quick Jump:
Technical Specifications
Microsemi JAN2N3868S technical specifications.
General
| Package/Case | TO-39 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Emitter Base Voltage (VEBO) | 4V |
| Max Collector Current | 3A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N3868S Datasheet
Download the complete datasheet for Microsemi JAN2N3868S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.