The JAN2N3999 transistor from Microsemi has a collector base voltage rating of 100V and a maximum collector current of 5A. It can operate within a temperature range of -55°C to 125°C. The device has a maximum power dissipation of 2W. It is available in a bulk packaging option and is not radiation hardened. The JAN2N3999 is not RoHS compliant.
MountingStud
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Technical Specifications
Microsemi JAN2N3999 technical specifications.
General
| Collector Base Voltage (VCBO) | 100V |
| Max Collector Current | 5A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Stud |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N3999 Datasheet
Download the complete datasheet for Microsemi JAN2N3999 to view detailed technical specifications.
No datasheet is available for this part.