The JAN2N4854 is a through hole transistor with a collector base voltage rating of 60V and a maximum collector current of 600mA. It operates within a temperature range of -55°C to 125°C and has a maximum power dissipation of 600mW. The device is available in bulk packaging and is not radiation hardened. It is not RoHS compliant.
MountingThrough Hole
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Technical Specifications
Microsemi JAN2N4854 technical specifications.
General
| Collector Base Voltage (VCBO) | 60V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600mW |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N4854 Datasheet
Download the complete datasheet for Microsemi JAN2N4854 to view detailed technical specifications.
No datasheet is available for this part.