The JAN2N5005 bipolar transistor from Microsemi features a collector base voltage of 100V and a maximum collector current of 10A. It has a maximum power dissipation of 2W and operates within a temperature range of -55°C to 125°C. The device is available in bulk packaging and is not radiation hardened or RoHS compliant.
MountingStud
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Technical Specifications
Microsemi JAN2N5005 technical specifications.
General
| Collector Base Voltage (VCBO) | 100V |
| Max Collector Current | 10A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Stud |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N5005 Datasheet
Download the complete datasheet for Microsemi JAN2N5005 to view detailed technical specifications.
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