The JAN2N5011 is a NPN transistor with a collector base voltage of 600V and a maximum collector current of 200mA. It operates within a temperature range of -65°C to 200°C and has a maximum power dissipation of 1W. The device is packaged in bulk and is intended for through hole mounting. It is not radiation hardened and is not RoHS compliant.
MountingThrough Hole
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Technical Specifications
Microsemi JAN2N5011 technical specifications.
General
| Collector Base Voltage (VCBO) | 600V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N5011 Datasheet
Download the complete datasheet for Microsemi JAN2N5011 to view detailed technical specifications.
No datasheet is available for this part.