The JAN2N5012S is a PNP transistor with a collector base voltage rating of 700V and a maximum collector current of 200mA. It has a maximum power dissipation of 1W and operates over a temperature range of -65°C to 200°C. The device is packaged in a TO-39-3 package and is designed for through hole mounting. It is not radiation hardened and is not RoHS compliant.
PackageTO-39-3
MountingThrough Hole
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Technical Specifications
Microsemi JAN2N5012S technical specifications.
General
| Package/Case | TO-39-3 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 700V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/727 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N5012S Datasheet
Download the complete datasheet for Microsemi JAN2N5012S to view detailed technical specifications.
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