PackageTO-5
MountingThrough Hole
PolarityNPN
Power1W
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Technical Specifications
Microsemi JAN2N5013 technical specifications.
General
| Package/Case | TO-5 |
| Collector Base Voltage (VCBO) | 800V |
| Collector Emitter Breakdown Voltage | 800V |
| Emitter Base Voltage (VEBO) | 5V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/727 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N5013 Datasheet
Download the complete datasheet for Microsemi JAN2N5013 to view detailed technical specifications.
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