The JAN2N5339U3 is a surface mount NPN transistor with a collector base voltage of 100V and a maximum collector current of 5A. It operates over a temperature range of -65°C to 200°C and has a maximum power dissipation of 1W. The device is available in bulk packaging and is not radiation hardened or RoHS compliant.
MountingSurface Mount
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Technical Specifications
Microsemi JAN2N5339U3 technical specifications.
General
| Collector Base Voltage (VCBO) | 100V |
| Max Collector Current | 5A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N5339U3 Datasheet
Download the complete datasheet for Microsemi JAN2N5339U3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.