PackageTO-5
MountingThrough Hole
PolarityPNP
Power750mW
Quick Jump:
Technical Specifications
Microsemi JAN2N5416 technical specifications.
General
| Package/Case | TO-5 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Voltage (VCEO) | 300V |
| Emitter Base Voltage (VEBO) | 6V |
| Max Collector Current | 1A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 750mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 750mW |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N5416 Datasheet
Download the complete datasheet for Microsemi JAN2N5416 to view detailed technical specifications.
No datasheet is available for this part.