The JAN2N5416S is a NPN transistor with a collector-emitter breakdown voltage of 300V and a maximum collector current of 1A. It has a maximum power dissipation of 750mW and operates over a temperature range of -65°C to 200°C. The device is packaged in a TO-39-3 package and is available in bulk. It is not radiation hardened and is not RoHS compliant.
PackageTO-39-3
MountingThrough Hole
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Technical Specifications
Microsemi JAN2N5416S technical specifications.
General
| Package/Case | TO-39-3 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector-emitter Voltage-Max | 2V |
| Lead Free | Contains Lead |
| Max Collector Current | 1A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 750mW |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/485 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N5416S Datasheet
Download the complete datasheet for Microsemi JAN2N5416S to view detailed technical specifications.
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