The JAN2N6051 is a PNP transistor with a collector-emitter saturation voltage of 3V and a maximum operating temperature of 175°C. It is packaged in a TO-3 case and is mounted through a hole. The transistor has a collector-emitter voltage rating of 80V and an emitter-base voltage rating of 5V. The device is not RoHS compliant.
PackageTO-3
MountingThrough Hole
PolarityPNP
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Technical Specifications
Microsemi JAN2N6051 technical specifications.
General
| Package/Case | TO-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Saturation Voltage | 3V |
| Collector Emitter Voltage (VCEO) | 80V |
| Contact Plating | Tin, Lead |
| Emitter Base Voltage (VEBO) | 5V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Polarity | PNP |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Microsemi JAN2N6051 Datasheet
Download the complete datasheet for Microsemi JAN2N6051 to view detailed technical specifications.
No datasheet is available for this part.