The JAN2N6306 is a power transistor with a collector-emitter breakdown voltage of 250V and a maximum collector current of 8A. It has a maximum power dissipation of 125W and operates over a temperature range of -65°C to 200°C. The device is packaged in a through-hole configuration and features tin and lead contact plating. The JAN2N6306 is not RoHS compliant and contains lead, making it suitable for military applications that require MIL-PRF-19500/498 compliance.
MountingThrough Hole
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Technical Specifications
Microsemi JAN2N6306 technical specifications.
General
| Collector Base Voltage (VCBO) | 500V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector-emitter Voltage-Max | 5V |
| Contact Plating | Tin, Lead |
| Lead Free | Contains Lead |
| Max Collector Current | 8A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/498 |
Compliance
| RoHS | Not Compliant |
Datasheet
Microsemi JAN2N6306 Datasheet
Download the complete datasheet for Microsemi JAN2N6306 to view detailed technical specifications.
No datasheet is available for this part.