This power MOSFET from Microsemi features a maximum drain to source voltage of 500V and a continuous drain current of 4.5A. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 75W. The device is packaged in a through hole configuration and is compliant with the MIL-PRF-19500/542 series. The MOSFET's Rds on max is 1.8 ohms and it has a fall time of 30ns.
MountingThrough Hole
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Technical Specifications
Microsemi JAN2N6762 technical specifications.
General
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Bulk |
| Radiation Hardening | No |
| Rds On Max | 1.8R |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/542 |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 30ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N6762 Datasheet
Download the complete datasheet for Microsemi JAN2N6762 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.