The JAN2N6770T1 is a power MOSFET from Microsemi with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 150W and a maximum drain to source voltage of 500V. The device is available in a TO-254-3 package and is mounted through a hole. It has a maximum continuous drain current of 12A and a maximum Rds on of 500mR.
PackageTO-254-3
MountingThrough Hole
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Technical Specifications
Microsemi JAN2N6770T1 technical specifications.
General
| Package/Case | TO-254-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 500V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Bulk |
| Radiation Hardening | No |
| Rds On Max | 500mR |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/543 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N6770T1 Datasheet
Download the complete datasheet for Microsemi JAN2N6770T1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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