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Technical Specifications
Microsemi JAN2N930 technical specifications.
General
| Package/Case | TO-18 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 1V |
| Contact Plating | Tin, Lead |
| Emitter Base Voltage (VEBO) | 6V |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 30mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/253 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N930 Datasheet
Download the complete datasheet for Microsemi JAN2N930 to view detailed technical specifications.
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