The JANS2N2857 is a NPN transistor with a collector base voltage of 30V and a maximum collector current of 40mA. It is designed to operate within a temperature range of -65°C to 200°C and has a maximum power dissipation of 200mW. This component is available in a through hole packaging style and is not radiation hardened or RoHS compliant.
MountingThrough Hole
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Technical Specifications
Microsemi JANS2N2857 technical specifications.
General
| Collector Base Voltage (VCBO) | 30V |
| Max Collector Current | 40mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANS2N2857 Datasheet
Download the complete datasheet for Microsemi JANS2N2857 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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