The JANTX2N4854 is a dual NPN/PNP transistor from Microsemi, packaged in a TO-78 case for through-hole mounting. It has a maximum collector-emitter breakdown voltage of 40V and a maximum collector current of 600mA. The device can handle a maximum power dissipation of 600mW and operates over a temperature range of -65°C to 200°C. It is not radiation hardened and is not RoHS compliant.
PackageTO-78
MountingThrough Hole
PolarityNPN, PNP
Power600mW
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Technical Specifications
Microsemi JANTX2N4854 technical specifications.
General
| Package/Case | TO-78 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 400mV |
| Emitter Base Voltage (VEBO) | 5V |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 600mW |
| Mount | Through Hole |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Bulk |
| Polarity | NPN, PNP |
| Power Dissipation | 600mW |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/421 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTX2N4854 Datasheet
Download the complete datasheet for Microsemi JANTX2N4854 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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