The JANTX2N5796U is a PNP dual transistor from Microsemi, featuring a maximum collector current of 600mA and a maximum power dissipation of 600mW. It has a maximum operating temperature range of -65°C to 175°C and is packaged in a surface mount SMD/SMT package. The transistor has a collector base voltage of 60V and a collector emitter voltage of 60V.
PackageSMD/SMT
MountingSurface Mount
PolarityPNP
Power600mW
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Technical Specifications
Microsemi JANTX2N5796U technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1.6V |
| Emitter Base Voltage (VEBO) | 5V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 600mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 600mW |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/496 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTX2N5796U Datasheet
Download the complete datasheet for Microsemi JANTX2N5796U to view detailed technical specifications.
No datasheet is available for this part.