The JANTX2N6546 is a TO-3 packaged NPN transistor with a collector-emitter breakdown voltage of 300V and a maximum collector current of 15A. It can handle a maximum power dissipation of 175W and operates over a temperature range of -65°C to 200°C. The transistor is not radiation hardened and is not RoHS compliant. It features tin-lead contact plating and is available in a through-hole mount configuration.
PackageTO-3
MountingThrough Hole
PolarityNPN
Power175W
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Technical Specifications
Microsemi JANTX2N6546 technical specifications.
General
| Package/Case | TO-3 |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 5V |
| Contact Plating | Tin, Lead |
| Emitter Base Voltage (VEBO) | 8V |
| Lead Free | Contains Lead |
| Max Collector Current | 15A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 175W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 175W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/525 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTX2N6546 Datasheet
Download the complete datasheet for Microsemi JANTX2N6546 to view detailed technical specifications.
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