The JANTXV1N6121 is a bidirectional diode with a minimum breakdown voltage of 40.9V and a maximum operating temperature of 175°C. It is packaged in an axial configuration for through-hole mounting. The diode has a maximum reverse leakage current of 1uA and a peak pulse power of 500W. It is not radiation hardened and is not RoHS compliant.
PackageAxial
MountingThrough Hole
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Technical Specifications
Microsemi JANTXV1N6121 technical specifications.
General
| Package/Case | Axial |
| Direction | Bidirectional |
| Min Breakdown Voltage | 40.9V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Reverse Leakage Current | 1uA |
| Mount | Through Hole |
| Packaging | Bulk |
| Peak Pulse Current | 8.5A |
| Peak Pulse Power | 500W |
| Radiation Hardening | No |
| Reverse Standoff Voltage | 32.7V |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTXV1N6121 Datasheet
Download the complete datasheet for Microsemi JANTXV1N6121 to view detailed technical specifications.
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