The JANTXV1N6137 is a bidirectional diode with a minimum breakdown voltage of 190V and a maximum reverse leakage current of 1uA. It can withstand a peak pulse current of 1.8A and a peak pulse power of 500W. The diode is designed for operation in a temperature range of -55°C to 175°C. It is available in a bulk packaging option and is suitable for use in applications where radiation hardening is not required.
MountingThrough Hole
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Technical Specifications
Microsemi JANTXV1N6137 technical specifications.
General
| Direction | Bidirectional |
| Min Breakdown Voltage | 190V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Reverse Leakage Current | 1uA |
| Mount | Through Hole |
| Packaging | Bulk |
| Peak Pulse Current | 1.8A |
| Peak Pulse Power | 500W |
| Radiation Hardening | No |
| Reverse Standoff Voltage | 152V |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTXV1N6137 Datasheet
Download the complete datasheet for Microsemi JANTXV1N6137 to view detailed technical specifications.
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