The JANTXV1N6148 is a bidirectional diode with a minimum breakdown voltage of 17.1V and a maximum operating temperature of 175°C. It is available in a through-hole package and is not radiation hardened. The diode has a maximum reverse leakage current of 10uA and a peak pulse power of 1.5kW.
MountingThrough Hole
Quick Jump:
Technical Specifications
Microsemi JANTXV1N6148 technical specifications.
General
| Direction | Bidirectional |
| Min Breakdown Voltage | 17.1V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Reverse Leakage Current | 10uA |
| Mount | Through Hole |
| Packaging | Bulk |
| Peak Pulse Current | 59.8A |
| Peak Pulse Power | 1.5kW |
| Radiation Hardening | No |
| Reverse Standoff Voltage | 13.7V |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTXV1N6148 Datasheet
Download the complete datasheet for Microsemi JANTXV1N6148 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.