The JANTXV1N6161US is a bidirectional diode from Microsemi, packaged in a MELF case and available in a tray. It has a minimum breakdown voltage of 58.9V and a maximum reverse leakage current of 5uA. The diode operates over a temperature range of -55°C to 125°C and is suitable for surface mount applications.
PackageMELF
MountingSurface Mount
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Technical Specifications
Microsemi JANTXV1N6161US technical specifications.
General
| Package/Case | MELF |
| Direction | Bidirectional |
| Min Breakdown Voltage | 58.9V |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Reverse Leakage Current | 5uA |
| Mount | Surface Mount |
| Packaging | Tray |
| Peak Pulse Current | 17.6A |
| Peak Pulse Power | 1.5kW |
| Radiation Hardening | No |
| Reverse Standoff Voltage | 47.1V |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTXV1N6161US Datasheet
Download the complete datasheet for Microsemi JANTXV1N6161US to view detailed technical specifications.
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