The S8-4150/TR7 diode from Microsemi features a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It can handle a maximum reverse voltage of 50V and a maximum repetitive reverse voltage of 75V. The diode has a maximum forward current of 400mA and a maximum reverse current of 1uA. It also has a reverse recovery time of 4ns and a peak non-repetitive surge current of 2A.
PackageSOIC
MountingSurface Mount
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Technical Specifications
Microsemi S8-4150/TR7 technical specifications.
General
| Average Rectified Current | 400mA |
| Package/Case | SOIC |
| Forward Current | 400mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Repetitive Reverse Voltage (Vrrm) | 75V |
| Max Reverse Current | 1uA |
| Max Reverse Voltage (DC) | 50V |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Peak Non-Repetitive Surge Current | 2A |
| Radiation Hardening | No |
| Reverse Recovery Time | 4ns |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi S8-4150/TR7 Datasheet
Download the complete datasheet for Microsemi S8-4150/TR7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.