The SG2023J-883B is a 7-element NPN transistor with a collector-emitter breakdown voltage of 95V and a saturation voltage of 1.6V. It is packaged in a CDIP package and is available in quantities of 100 in bulk packaging. The transistor is suitable for operation over a temperature range of -55°C to 125°C and is radiation hardened. The device is not lead-free, as it contains lead. It is rated for a maximum collector current of 500mA.
PackageCDIP
MountingThrough Hole
PolarityNPN
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Technical Specifications
Microsemi SG2023J-883B technical specifications.
General
| Package/Case | CDIP |
| Collector Emitter Breakdown Voltage | 95V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 95V |
| Collector-emitter Voltage-Max | 1.6V |
| Lead Free | Contains Lead |
| Max Collector Current | 500mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 7 |
| Package Quantity | 100 |
| Packaging | Bulk |
| Polarity | NPN |
| Radiation Hardening | Yes |
Compliance
| RoHS | Not CompliantYes |
Datasheet
Microsemi SG2023J-883B Datasheet
Download the complete datasheet for Microsemi SG2023J-883B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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