The SG2813J-883B is an NPN transistor with a collector-emitter saturation voltage of 1.9V and a maximum collector current of 600mA. It has a maximum operating temperature of 125°C and a minimum operating temperature of -55°C. The transistor is packaged in a CDIP and is available in a rail or tube packaging configuration. It is a radiation-hardened device and is suitable for use in high-reliability applications.
PackageCDIP
MountingThrough Hole
PolarityNPN
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Technical Specifications
Microsemi SG2813J-883B technical specifications.
General
| Package/Case | CDIP |
| Collector Emitter Saturation Voltage | 1.9V |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 8 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | Yes |
Compliance
| RoHS | Not CompliantYes |
Datasheet
Microsemi SG2813J-883B Datasheet
Download the complete datasheet for Microsemi SG2813J-883B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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