Mitsubishi
MGFC42V6472A-01
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
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Technical Specifications
Mitsubishi MGFC42V6472A-01 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Mitsubishi MGFC42V6472A-01 Datasheet
Download the complete datasheet for Mitsubishi MGFC42V6472A-01 to view detailed technical specifications.
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